发明名称 Method for etching material longitudinally spaced from etch mask
摘要 A micromachining process forms a plurality of layers on a wafer. This plurality of layers includes both a support layer and a given layer. The process also forms a mask, with a mask hole, at least in part on the support layer. In this configuration, the support layer is positioned between the mask hole and the given layer, and longitudinally spaces the mask hole from the given layer. The process also etches a feature into the given layer through the mask hole.
申请公布号 US8455288(B2) 申请公布日期 2013.06.04
申请号 US201113232282 申请日期 2011.09.14
申请人 YANG KUANG L.;CHEN THOMAS D.;ANALOG DEVICES, INC. 发明人 YANG KUANG L.;CHEN THOMAS D.
分类号 H01L21/00 主分类号 H01L21/00
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