发明名称 |
HETEROJUNCTION BIPOLAR TRANSISTOR WITH EPITAXIAL EMITTER STACK TO IMPROVE VERTICAL SCALING |
摘要 |
A heterojunction bipolar transistor (HBT) may include an n-type doped crystalline collector formed in an upper portion of a crystalline silicon substrate layer; a p-type doped crystalline p+Si1-xGex layer, formed above the n-type doped collector, that forms a p-type doped internal base of the HBT; a crystalline silicon cap formed on the p-type doped crystalline p+Si1-xGex layer, in which the crystalline silicon cap includes an n-type impurity and forms an n-type doped emitter of the HBT; and an n-type doped crystalline silicon emitter stack formed within an opening through an insulating layer to an upper surface of the crystalline silicon cap.
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申请公布号 |
US2013126944(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113303248 |
申请日期 |
2011.11.23 |
申请人 |
ADAM THOMAS N.;HARAME DAVID L.;LIU QIZHI;REZNICEK ALEXANDER;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM THOMAS N.;HARAME DAVID L.;LIU QIZHI;REZNICEK ALEXANDER |
分类号 |
H01L29/70;H01L21/331 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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