发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
<p>A method of fabricating a SiC semiconductor device (200) includes the steps of preparing a silicon carbide semiconductor (100) including a first surface (100a) having impurities implanted at least partially, forming a second surface (100b) by dry etching the first surface (100a) of the silicon carbide semiconductor (100) using gas including hydrogen gas, and forming an oxide film (126) constituting the silicon carbide semiconductor device (200) on the second surface (100b).</p> |
申请公布号 |
EP2584594(A1) |
申请公布日期 |
2013.04.24 |
申请号 |
EP20110795436 |
申请日期 |
2011.02.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ITOH, SATOMI;SHIOMI, HIROMU;NAMIKAWA, YASUO;WADA, KEIJI;SHIMAZU, MITSURU;HIYOSHI, TORU |
分类号 |
H01L21/28;H01L21/306;H01L21/336;H01L29/16;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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