SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with small leakage current.

SOLUTION: A first layer 2 has an n type. A second layer 3 is epitaxially formed on the first layer 2 and has a p type. A third layer 4 is provided on the second layer 3 and has the n type. The concentration of a donor-type impurity is defined as ND, and the concentration of an acceptor-type impurity is defined as NA. The position in the depth direction from the interface between the first layer 2 and the second layer 3 toward the first layer 2 is defined as D1. The D1 satisfying 1≤ND/NA≤50 is within 1 μm. A gate trench 6 penetrating through the third layer 4 and the second layer 3 and reaching the first layer 2 is provided. A gate insulating film 8 coats the inner wall of the gate trench 6. A gate electrode 9 is embedded in the gate trench 6 via the gate insulating film 8.

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