SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing device capable of forming an insulating film of low dielectric constant having small film stress.

SOLUTION: A substrate processing device is configured to perform: a silicon oxide film formation step of forming a silicon oxide film on a surface of a substrate by supplying excitation energy into a processing chamber with the inorganic silicon gas and oxygen-containing gas supplied into the processing chamber; and a silicon film formation step of forming a silicon film on the surface of the substrate by supplying the excitation energy into the processing chamber with the organic silicon gas supplied into the processing chamber. Performing these steps forms an insulating film on the surface of the substrate in the processing chamber.

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