| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that manufacturing cost of a thin film transistor becomes high at manufacturing a conventional thin film transistor having a bottom gate top contact structure because a large number of masks are used. <P>SOLUTION: Source and drain electrodes can be normally formed by forming a slit having a width corresponding to a channel region smaller than the resolution of an exposure device to a mask for manufacturing the source and drain electrodes and a patterned active layer, and by increasing an exposure amount. Further, the active layer having a desired shape can be formed by using the mask and by decreasing the exposure amount. <P>COPYRIGHT: (C)2013,JPO&INPIT |
