发明名称 Non-volatile static random access memory and operation method thereof
摘要 A non-volatile static random access memory (NV-SRAM) including a latch unit, a first switch, a second switch, a first non-volatile memory (NVM), and a second NVM and an operation method thereof are provided. First terminals of the first and the second switch are respectively connected to a first and a second terminal of the latch unit. Second terminals of the first and the second switch are respectively connected to a first and a second bit line. Control terminals of the first and the second switch are connected to a word line. First terminals of the first and the second NVM are respectively connected to the first and the second terminal of the latch unit. Second terminals of the first and the second NVM are respectively connected to the first and the second bit line. Enable terminals of the first and the second NVM are connected to an enable line.
申请公布号 US8331134(B2) 申请公布日期 2012.12.11
申请号 US20100853301 申请日期 2010.08.10
申请人 CHIU PI-FENG;CHANG MENG-FAN;LIN KU-FENG;SHEU SHYH-SHYUAN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHIU PI-FENG;CHANG MENG-FAN;LIN KU-FENG;SHEU SHYH-SHYUAN
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址