发明名称 FET based sensor with dual-gate stack
摘要 <p>The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor comprising: a field effect transistor integrated on the substrate and having a source (S), gate (G) and drain (D) connections, said gate of the field effect transistor comprising: a sensing gate (18) conductively coupled to a sensing electrode (16); and a bias gate (20), wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.</p>
申请公布号 EP2522993(A1) 申请公布日期 2012.11.14
申请号 EP20110165350 申请日期 2011.05.09
申请人 NXP B.V. 发明人 NACKAERTS, AXEL;MERZ, MATTHIAS;PONOMAREV, YOURI, V.
分类号 G01N27/414 主分类号 G01N27/414
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