| 摘要 |
An electronic device can include a first layer having a primary surface, a well region lying adjacent to the primary surface, and a buried doped region spaced apart from the primary surface and the well region. The electronic device can also include a trench extending towards the buried doped region, wherein the trench has a sidewall, and a sidewall doped region along the sidewall of the trench, wherein the sidewall doped region extends to a depth deeper than the well region. The first layer and the buried region have a first conductivity type, and the well region has a second conductivity type opposite that of the first conductivity type. The electronic device can include a conductive structure within the trench, wherein the conductive structure is electrically connected to the buried doped region and is electrically insulated from the sidewall doped region. Processes for forming the electronic device are also described. |
