Bi-CMOS Device and Method

摘要

A method of manufacturing a bipolar transistor and a CMOS transistor forms a bipolar transistor with a sacrificial spacer (26) in a window (20) formed in a gate stack (14,12), forms an emitter (28) in the centre of the spacer (26) and etches back. The sacricial spacer (26) is removed by etching and gate stack (14,12) is then removed in the step that patterns the gate of the CMOS transistor. The step of forming the low doped drain in the CMOS transistor may be used to provide additional doping in the bipolar transistor under a further spacer.