发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<p>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE OF THE DISCLOSUREAt least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a5 large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved.10Figure 1B</p> |
申请公布号 |
SG183740(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
SG20120061206 |
申请日期 |
2010.02.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SHUNPEI YAMAZAKI;YASUYUKI ARAI |
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