发明名称 |
REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON |
摘要 |
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si). |
申请公布号 |
US2012237429(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201013496002 |
申请日期 |
2010.07.09 |
申请人 |
NETSU SHIGEYOSHI;OGURO KYOJI;SHIMIZU TAKAAKI;KUROSAWA YASUSHI;KUME FUMITAKA;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NETSU SHIGEYOSHI;OGURO KYOJI;SHIMIZU TAKAAKI;KUROSAWA YASUSHI;KUME FUMITAKA |
分类号 |
B01J19/00;C01B33/027 |
主分类号 |
B01J19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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