| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation device which supplies a gas having a uniform concentration in the length direction of an injector body. <P>SOLUTION: A film formation device supplies two kinds of reaction gases to substrates in a vacuum vessel in turn to form a thin film. The film formation device includes: substrate placement regions which are provided for placing substrates and are disposed so as to be spaced away from each other in the rotation direction of a rotation table; and isolation regions including isolation gas supply means. A gas injector supplying the reaction gases to the vacuum vessel includes multiple gas outflow holes located in a wall part of an injector body, which forms a gas passage, and arranged along the length direction of the wall part, and a guide member which is provided so as to form a slit gas discharge port between the injector body and an outer surface and guides the gas flowed out from the gas outflow holes to the gas discharge port. The gas injector extends in the direction that intersects a moving path of the rotation table and is disposed so that the gas discharge port faces the rotation table. <P>COPYRIGHT: (C)2012,JPO&INPIT |
