| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving retention characteristics of holes trapped in a fin. <P>SOLUTION: A fin 3 is formed on a semiconductor substrate 1. A gate electrode G is provided on both sides of the fin 3 via a gate insulating film 5. A depletion layer KU forms a potential barrier, which traps holes in a body region between channel regions of the fin 3, in the fin 3. A source layer S and a drain layer D are formed in the fin 3 so as to interpose the gate electrode G therebetween. <P>COPYRIGHT: (C)2012,JPO&INPIT |
