发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus in which the selection ratio of selective etching can be enhanced. <P>SOLUTION: A substrate W is silylated when a silylation reagent is supplied thereto. When an etching agent is supplied subsequently to the substrate W, the substrate W thus silylated is etched. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012164949(A) 申请公布日期 2012.08.30
申请号 JP20110063722 申请日期 2011.03.23
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HASHIZUME AKIO
分类号 H01L21/306 主分类号 H01L21/306
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