COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE METERIALS

摘要

PURPOSE: A composite target sputtering for forming doped phase change materials is provided to prevent yield reduction by using oxygen as a reactive gas. CONSTITUTION: A bottom electrode structure is formed on a substrate. A sputter target with phase change materials is used. A phase change memory material layer(312A,312B) is formed on a bottom electrode(320). The phase change memory material layer includes silicon and silicon additives by sputtering. A top electrode(340) is formed on the phase change memory material layer.