METHOD FOR MANUFACTURING NANO-IMPRINT MOULD, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING THE NANO IMPRINT MOULD MANUFACTURED THEREBY, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing a nano-imprint mould, a light-emitting diode using same, and a method for manufacturing same. The method for manufacturing a light-emitting diode of the present invention comprises: a step for forming on a temporary substrate an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer; a step for forming on the p-type nitride semiconductor layer a p-type electrode; a step for forming a conductive substrate on the p-type electrode; a step for exposing the n-type nitride semiconductor layer by removing the temporary substrate; a step for forming a nano-imprint resist layer on the n-type nitride semiconductor; a step for transferring a nano-pattern on the nano-imprint resist layer by pressurizing a nano-imprint mould on the nano-imprint resist layer; a step for isolating the nano-imprint mould from the nano-imprint resist layer having formed the nano-pattern; and a step for forming an n-type electrode by etching a part of the nano-imprint resist layer having formed the nano-pattern. The present invention enables a method for manufacturing a nano-imprint mould that can efficiently and economically form a nano-pattern for enhancing the light extraction efficiency of a light-emitting diode, a method for manufacturing a light-emitting diode, and a light-emitting diode using the nano-imprint mould.