发明名称 METHOD FOR THE SIMULTANEOUS MATERIAL-REMOVING PROCESSING OF BOTH SIDES OF AT LEAST THREE SEMICONDUCTOR WAFERS
摘要 PURPOSE: A method for processing both sides of three or more semiconductor wafers at the same time is provided to improve both sides process method having planet kinematics in order to economically manufacture plane-parallel semiconductor wafers of large size. CONSTITUTION: The intermediate point(5) of an opening(1) is arranged on a pitch circle(2). The radius(r) of the opening is larger than the radius of a semiconductor wafer. The opening sweeps a domain which is contiguous to a circular envelope(6) arranged to a concentric circle. A plurality of carriers(13) precisely comprises one opening. The plurality of carriers has the pitch-circle diameter(7) of an external saw blade of 720mm.
申请公布号 KR20120067302(A) 申请公布日期 2012.06.25
申请号 KR20110134673 申请日期 2011.12.14
申请人 SILTRONIC AG 发明人 PIETSCH GEORG
分类号 H01L21/304 主分类号 H01L21/304
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