| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for removing excessive dopant from a doped substrate. <P>SOLUTION: A substrate is doped by dopant implantation using energy. A reactive gas mixture is supplied to a process chamber by optionally using plasma, and is reacted with excessive dopant adsorbed on a surface and high-concentration dopant in the vicinity of the surface, thereby removing the dopant and forming a volatile compound. The reactive gas mixture can be supplied during heat treatment, and can also be supplied at a temperature different from a heat treatment temperature before and after the heat treatment. The volatile compound is removed. In the substrate thus treated, no toxic compound is formed when the substrate is preserved or transferred outside a process device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
