SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A method for fabricating semiconductor device is provided. At least two gate stack structures are formed on a substrate (100) and located at an active area and an isolation region (101) respectively. The gate stack structures include a dummy gate (104) and a gate dielectric layer (102). Sidewalls (106) are formed around gate stack structures. Source/drain regions (120) are formed in the substrate (100) and a material layer (140) is filled between gate stack structures and exposes the dummy gate (104) and sidewalls (106). And then, the dummy gate (104) and the material layer (140) are removed to form recesses (142) between the sidewalls (106). Recesses (142) are filled with conductive material and planarized to form first contact plugs. Second contact plugs are formed and contact the top surface of the first contact plugs. The method enlarges the processing window during the contact plugs making.