发明名称 |
SOS SUBSTRATE HAVING LOW SURFACE DEFECT DENSITY |
摘要 |
A method of making bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate. |
申请公布号 |
US2012119323(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201013320655 |
申请日期 |
2010.05.25 |
申请人 |
AKIYAMA SHOJI;ITO ATSUO;TOBISAKA YUJI;KAWAI MAKOTO;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA SHOJI;ITO ATSUO;TOBISAKA YUJI;KAWAI MAKOTO |
分类号 |
H01L21/762;H01L29/02 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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