发明名称 |
Semiconductor Device Including Graphene And Method Of Manufacturing The Semiconductor Device |
摘要 |
In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer. |
申请公布号 |
US2012112250(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201113286592 |
申请日期 |
2011.11.01 |
申请人 |
CHUNG HYUN-JONG;LEE JAE-HO;LEE JAE-HONG;SHIN HYUNG-CHEOL;SEO SUN-AE;LEE SUNG-HOON;HEO JIN-SEONG;YANG HEE-JUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG HYUN-JONG;LEE JAE-HO;LEE JAE-HONG;SHIN HYUNG-CHEOL;SEO SUN-AE;LEE SUNG-HOON;HEO JIN-SEONG;YANG HEE-JUN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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