发明名称 SEMICONDUCTOR POWER MODULE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.
申请公布号 US2012074556(A1) 申请公布日期 2012.03.29
申请号 US201113247105 申请日期 2011.09.28
申请人 HANADA TOSHIO;ROHM CO., LTD. 发明人 HANADA TOSHIO
分类号 H01L23/52;H01L21/60 主分类号 H01L23/52
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