GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: A III family nitride nano rod light emitting device and a manufacturing method thereof are provided to grow a III family nitride nano rod light emitting device of a different diameter on the same substrate, thereby realizing light of various wavelengths. CONSTITUTION: An insulating film(120) is formed on a substrate. The insulating film exposes a portion of the substrate. The insulating film includes a plurality of openings of different diameters. A first conductive III family nitride nano rod(160) has a different diameter. The first conductive III family nitride nano rod is formed on each opening. An active layer and a second conductive semiconductor layer(162) are successively formed on a surface of each first conductive III family nitride nano rod.