| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor layered structure allowing band widening independently of size, composition etc. of a quantum dot, and an optical element including the same, as well as a method of the band widening of optical spectra in the semiconductor layered structure. <P>SOLUTION: A semiconductor layered structure 1 has a substrate 10, a first quantum dot layer 30, a spacer layer 40, a second quantum dot layer 50, and a cap layer 60 in this order. A thickness of the spacer layer 40 is chosen so that the variation of the thickness can substantially vary optical spectra. <P>COPYRIGHT: (C)2012,JPO&INPIT |
