NON-VOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory that can be highly integrated with high reliability in operation and a method for manufacturing the same. SOLUTION: In the non-volatile memory element, a semiconductor substrate has a pair of sidewall channel regions that are disposed upwardly and are mutually opposed. A floating gate electrode fills a pair of the sidewall channel regions and is protruded on the semiconductor substrate. A control gate electrode is disposed on the semiconductor substrate so as to cover a part of the floating gate electrode. At least a pair of the sidewall channel regions are disposed as mutually opposed. COPYRIGHT: (C)2009,JPO&INPIT