| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize high yield detection by aligning secondary electrons with a center axis of a detection system and by preventing loss caused by an aperture of the detection system, for performing reviewing and categorizing shallow concavities and convexities and fine foreign bodies in high accuracy, maintaining high resolution, in wafer inspection in the middle of semiconductor manufacturing processes. <P>SOLUTION: In an object lens of an electromagnetic field superposition type capable of attaining high resolution, secondary electrons 38 generated from a sample 20 are accelerated for suppressing secondary electron energy dependence of their rotation caused by an action of the object lens 10. Components of lower angles are separated from components of higher angles out of their angles of elevation from the generating position of the secondary electrons by annular detectors provided between an electron source 8 and the object lens 10. Further, when components of azimuth angles are also detected to be sorted, the secondary electrons are adjusted and deflected by an ExB so that, while the center axis of the secondary electrons concentrated thinner by the acceleration is aligned with the center axis of a low elevation angle signal detection system, they are kept away from an aperture of a high elevation angle signal detection system. <P>COPYRIGHT: (C)2012,JPO&INPIT |
