| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem of a chip type thin film fuse, for example, constituted by laminating a low melting point metal layer consisting of tin (Sn) on a metal layer in the shape of wiring consisting of copper (Cu) that a failure such as thinning and disconnection of the metal layer occurs due to electromigration (EM) of copper (Cu) into tin (Sn) even in the rated use state, and to prolong the life of the fuse by preventing the EM from progressing. <P>SOLUTION: Average crystal grain size in a low melting point metal layer (tin) is made equal to or larger than one half of the thickness of the low melting point metal layer by heat treating of a manufactured fuse at a recrystallization temperature level lower than the melting point of the low melting point metal layer (tin). Consequently, progress level of EM is lowered sharply and a chip type thin film fuse having a long life can be attained without increasing the thickness of the metal layer and without changing the fuse blowout characteristics. <P>COPYRIGHT: (C)2012,JPO&INPIT |
