| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent occurrence of unevenness caused by projections formed by sequential lateral crystallization. <P>SOLUTION: An incomplete melting energy regions in which film is not melt by a laser beam are juxtaposed with one another in an amplitude direction in a corrugated shape so as to be spaced from another, and the gaps between the incomplete melting energy regions are set to melting energy regions in which film is melt by the laser beam. The laser beam is applied to the film to perform sequential lateral crystallization on the melt portion of the film from a solid-phase portion. Furthermore, the film is positionally changed so that the solid-phase portion becomes a melt portion, the gaps between the incomplete melting energy regions are set to the melting energy regions, and the film is irradiated with the laser beam to perform sequential lateral crystallization. A silicon film 10 is irradiated and crystallized with a laser pattern having incomplete melting energy regions and the melting energy regions. <P>COPYRIGHT: (C)2012,JPO&INPIT |
