| 摘要 |
High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, O, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 µm or more and 20 µm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. |
