| 摘要 |
A method for producing TiN nitride films consists in target sputtering, forming a modified covering as a result of ion implantation in polycrystalline substrate lattice of the ionized atoms of titanium target and reactive gas nitrogen. A substrate made of structural steel 30X13 is used as a polycrystalline substrate, to which before implantation negative potential is supplied, the voltage on the anode and cathode is turned, where the discharge occurs, simmutaneously the voltage is suppied to the target by the intensive bombardment of titanium target with nitrogen ions and sputtering of material thereof, at that the dispersed ions of the impurity, driven out of the target, penetrate into the steel substrate, while the nitride film is produced by using implantation mode - voltage (U) and current (I) in the gas discharge of 430 V and , on the target U= 1.2 kV and I= 60 mA, on the substrate U= 35 kV and I= 35 mA, radiation dose D = 6.69 • 10– 6.2 • 10ion./sm, leading to a strengthening of the substrate. |
