| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a MOS structure is used as a diode, with a low leakage current to a semiconductor substrate. <P>SOLUTION: A semiconductor device comprises a field-effect transistor and a resistance element 20. The resistance element is connected between a gate electrode 19 of the field-effect transistor and a connection point 23 of a back gate electrode 24 and a first source/drain region 16 of the field-effect transistor. A voltage is applied between a second source/drain region 15 and the gate electrode 19. <P>COPYRIGHT: (C)2012,JPO&INPIT |
