发明名称 |
Methods of fabricating nonvolatile memory devices |
摘要 |
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.
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申请公布号 |
US8053829(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20090635098 |
申请日期 |
2009.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG PIL-KYU;BAE DAELOK;LEE JONGWOOK;CHOI SEUNGWOO;SON YONG-HOON;KANG JONG-HYUK;KIM JUNG HO |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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