发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
The invention relates to a semiconductor device and a method of fabricating the same, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance, and the SAC process is eliminated at the time of the bit line formation. A method of fabricating a semiconductor device according to the invention comprises: forming a device isolation film for defining a multiplicity of active regions in a semiconductor substrate; forming a multiplicity of buried word lines in the semiconductor substrate; forming a storage node contact hole for exposing a storage node contact region of two adjoining active regions; filling the storage node contact hole with a storage node contact plug material; forming a bit-line groove for exposing a bit-line contact region of the active region and splitting the storage node contact plug material into two; and burying the bit line into the bit-line groove.
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申请公布号 |
US8048737(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20090648710 |
申请日期 |
2009.12.29 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM DO HYUNG;CHO YOUNG MAN |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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