| 摘要 |
<p>An electron-beam exposure apparatus (100) includes a first measurement device (4) which irradiates a mark formed on a substrate (6) with light to detect reflected light of the light, thereby measuring the position of the mark, a second measurement device (24) which detects a secondary electron generated by the electron beam guided from an electron source (21) onto the mark, thereby measuring the position of the mark, and a controller (7, 8, 10, 11). The controller performs measurements for the mark using the first and second measurement devices without interposing drawing of a pattern on the substrate with the electron beam between the measurements, calculates a shift in irradiated point of the electron beam based on the difference between the measurement results obtained by the first and second measurement devices, and controls at least one of a stage (2) and the electron optical system to correct the calculated shift.</p> |
