发明名称 CONFIGURABLE MEMORY DEVICE
摘要 A method includes forming a memory device through providing an array of non-volatile memory cells including one or more non-volatile memory cell(s) and an array of volatile memory cells including one or more volatile memory cell(s) on a substrate. The method also includes appropriately programming an address translation logic associated with the memory device through a set of registers associated therewith to enable configurable mapping of an address associated with a sector of the memory device to any memory address space location in a computing system associated with the memory device. The address translation logic is configured to enable translation of an external virtual address associated with the sector of the memory device to a physical address associated therewith.
申请公布号 US2011258364(A1) 申请公布日期 2011.10.20
申请号 US20100763240 申请日期 2010.04.20
申请人 CHIP MEMORY TECHNOLOGY, INC., 发明人 LEUNG WINGYU
分类号 G06F12/00;G06F12/02;G06F12/10 主分类号 G06F12/00
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