发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR, EPITAXIAL WAFER, AND METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR |
摘要 |
A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region. |
申请公布号 |
US2011210378(A1) |
申请公布日期 |
2011.09.01 |
申请号 |
US20100846311 |
申请日期 |
2010.07.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UENO MASAKI;KYONO TAKASHI;ENYA YOHEI;SUMITOMO TAKAMICHI;YOSHIZUMI YUSUKE |
分类号 |
H01L29/778;H01L21/338;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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