发明名称 Semiconductor device and semiconductor device manufacturing method
摘要 A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.
申请公布号 US8008159(B2) 申请公布日期 2011.08.30
申请号 US20080167264 申请日期 2008.07.03
申请人 ELPIDA MEMORY, INC. 发明人 NISHI HIROO
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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