The present invention relates to a sputtering device having a dual chamber. The most salient feature of the present invention is that it is devised in such a way that processing can be carried out on a large-area substrate even in a device which occupies a small space because the space where pressure-adjustment processing has to be carried out is reduced, by dividing the chamber of the sputtering device into a basic chamber and a magnetron chamber and using the sputtering target as part of the dividing wall.
申请公布号
WO2011037330(A3)
申请公布日期
2011.07.07
申请号
WO2010KR05782
申请日期
2010.08.27
申请人
AP SYSTEMS INC.;LEE, CHUN SOO;KANG, WON GU;LEE, DAE JONG;CHOI, DAE KEON
发明人
LEE, CHUN SOO;KANG, WON GU;LEE, DAE JONG;CHOI, DAE KEON