METHOD FOR MANUFACTURING GAN-BASED NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE,申请号KR20097026490-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING GAN-BASED NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE
摘要
申请公布号	KR101040852(B1)	申请公布日期	2011.06.14
申请号	KR20097026490	申请日期	2008.05.22
申请人		发明人
分类号	C30B25/18;C30B29/38;H01L21/20;H01L33/12;H01L33/32	主分类号	C30B25/18
代理机构		代理人
主权项
地址

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