ENHANCEMENT NITRIDE BASED SEMICONDUCTOR DEVICE EMPLOYING FLOATING GATE STRUCTURE

摘要

PURPOSE: An enhancement nitride based semiconductor device using a floating gate structure is provided to use a floating gate structure, thereby moving the threshold voltage of the device toward a positive direction without influencing a secondary electron gas layer. CONSTITUTION: A source electrode(35) is formed on one side of a nitride based semiconductor layer(301). A drain electrode(36) is formed on the other side of the nitride based semiconductor layer. A first insulation layer(37-1) is formed between the source electrode and the drain electrode. A floating gate(38-1) is separated from the source electrode and the drain electrode. A control gate(38-2) is formed on the top or the side of the second insulation layer.