发明名称 |
Method to manufacture silicon quantum islands and single-electron devices |
摘要 |
A method of manufacturing a single-electron transistor device is provided. The method includes forming a thinned region in a silicon substrate, the thinned region offset by a non-selected region. The method also includes forming at least one quantum island from the thinned region by subjecting the thinned region to an annealing process. The non-selected region is aligned with the quantum island and tunnel junctions are formed between the quantum island and the non-selected region. The present invention also includes a single-electron device, and a method of manufacturing an integrated circuit that includes a single-electron device.
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申请公布号 |
US7939398(B2) |
申请公布日期 |
2011.05.10 |
申请号 |
US20090619352 |
申请日期 |
2009.11.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WASSHUBER CHRISTOPH;BARNA GABRIEL G.;FAYNOT OLIVIER A. |
分类号 |
H01L21/336;H01L21/335;H01L21/44;H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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