发明名称 |
Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films |
摘要 |
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
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申请公布号 |
US7939872(B2) |
申请公布日期 |
2011.05.10 |
申请号 |
US20080079757 |
申请日期 |
2008.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-CHEOL;KANG SANG-YEOL;LIM KI-VIN;CHOI HOON-SANG;CHUNG EUN-AE |
分类号 |
H01L29/51 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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