发明名称 |
Image sensor and method of driving transfer transistor of image sensor |
摘要 |
Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
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申请公布号 |
US7935918(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20090645588 |
申请日期 |
2009.12.23 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
MHEEN BONG KI;KIM MI JIN;SONG YOUNG JOO |
分类号 |
H01L31/062;H04N5/335;H04N5/361;H04N5/3745 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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