| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device where interference is reduced between the storage elements. SOLUTION: In the semiconductor memory device 1, an STI 16 is provided in a part of the upper layer of a silicon substrate 11, and the upper layer of a silicon substrate 11 is partitioned into a plurality of active areas AA extending in the Y direction. The width Wm of the intermediate part 27 of the active area AA in the vertical direction (Z direction) is made narrower than the width Wu of the upper part 26 and the width W1 of the lower part 28. COPYRIGHT: (C)2011,JPO&INPIT |
