发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To suppress the number of decoder circuits included in an antifuse element set AFSET. <P>SOLUTION: A bit memory circuit BM of the antifuse element set AFSET includes two antifuse elements AF which changes from an insulation state to a conductive state when a program voltage is applied. 1-bit data is represented by the logical states of the two antifuse elements AF. The two antifuse elements AF are collectively controlled by the one decoder circuit 160. When writing data, the decoder circuit 160 simultaneously performs insulation-breakdown on the two antifuse elements AF by simultaneously connecting the two antifuse elements AF to program voltage lines 16a and 16b. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011060359(A) 申请公布日期 2011.03.24
申请号 JP20090207185 申请日期 2009.09.08
申请人 ELPIDA MEMORY INC 发明人 KUBONAI SHUICHI;FUJISAWA HIROKI
分类号 G11C17/14;G11C29/04;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C17/14
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