| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a contact electrode on an N-polar surface of an n-type layer through annealing at 350°C or lower. <P>SOLUTION: In a Group III nitride-based compound semiconductor device 100 produced by a laser lift-off process, the contact electrode 130 is formed, through annealing at 350°C or lower, on a surface 11s having a micro embossment formed by processing the N-polar surface of the n-type layer 11, from vanadium, chromium, tungsten, nickel, platinum, niobium or iron. In this case, a pseudo-silicon-heavily-doped layer is formed on the surface 11s of the n-type layer 11 as the N-polar surface through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluorine-ion-containing chemical is not carried out, so that ohmic contact is obtained, and low resistance is attained. <P>COPYRIGHT: (C)2011,JPO&INPIT |
