| 摘要 |
<p>The method involves micromachining a micromechanical part with a silicon core (1), or a batch of parts in a silicon wafer. A layer of silicon dioxide is formed over the entire surface of the part in one step or different steps by thermal oxidation of the surface at a temperature ranging between 900 to 1200 degree Celsius, to obtain a silicon dioxide thickness that is five times greater than a thickness of native silicon dioxide. The layer is removed by chemical attack. A coating in a material having tribological properties higher than that of crystalline silicon is formed on the surface.</p> |
