Wide bandgap HEMTs with source connected field plates

摘要

A transistor comprises a plurality of active semiconductor layers (16,18) and source and drain electrodes (20, 22) on the semiconductor layers. A gate (24) is formed between the source and drain electrodes and on the semiconductor layers. A spacer layer (26) covers at least part of the surface of the semiconductor layers between the gate and the drain, or covers at least part of the surface of the semiconductor layers between the gate and the source. A field plate (30) is formed on the spacer layer; and a conductive path (34,46) runs outside the area covered by the semiconductor layers, and between the field plate and the source electrode to electrically connect the field plate to the source electrode.