| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor substrate having a transistor which uses microcrystal silicon as a channel region, is improved in contact yield, and has excellent characteristics; and to provide a method of manufacturing the transistor substrate. SOLUTION: The transistor 100 includes a substrate 11, a gate electrode 112, a gate insulating film 113, a first semiconductor layer 114, a second semiconductor layer 115, a stopper film 116, ohmic contact layers 117, 118, a drain electrode 119, and a source electrode 120. The second semiconductor layer 115 after being laminated on the first semiconductor layer 114 using the microcrystal silicon is brought into contact with the ohmic contact layers 117, 118 on side faces of the first semiconductor layer 114 and second semiconductor layer 115 to improve the contact yield, thereby providing the transistor substrate having the transistor with the excellent characteristics, and the method of manufacturing the transistor substrate. COPYRIGHT: (C)2011,JPO&INPIT
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